Recent Presentations

92) B.Gnade, “Materials and Devices for Flexible Electronics”, Univ. of North Texas Chemistry Seminar, October 26, 2007 (Invited).

91) B.Gnade, “Materials and Devices for Flexible Electronics”, SID Southwest Regional Meeting, Phoenix, AZ, September 26, 2007 (Invited).

90) B.Gnade, “Materials and Devices for Flexible Electronics”, 5th International Symposium on Plasma Processes and Diagnostics, Seoul, South Korea, April 6, 2007 (Invited).

89) A. Herrera-Gomez, F.S. Aguirre-Tostado, G. Pant, M.A. Quevedo-Lopez, P.D. Kirsch, B.E. Gnade, and R.M. Wallace, “Dependence of the Nitrogen Depth Profile on Annealing in HfSiON/SiON/Si(001) Ultrathin Films”, AVS  3rd International Symposium, San Francisco, CA, November 12-17, 2006.

88) A. Herrera-Gomez, F.S. Aguirre-Tostado, G.K. Pant, M. A. Quevedo-Lopez, Paul D. Kirsch, B.E. Gnade and R.M. Wallace, “Diffusion of Nitrogen in HfSiON/SiON/Si(001) Ultrathin Films”, 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), SEMATECH, Austin, TX, September 27-29, 2006.

87) F.S. Aguirre-Tostado, A. Herrera-Gomez, M.J.Kim, B.E.Gnade, R.M. Wallace,  M..A. Quevedo-Lopez, and P.D. Kirsch, “Study of Plasma and Thermally Nitrided ultra-thin Hf based high-k dielectrics”, 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), SEMATECH, Austin, TX, September 27-29, 2006.

86) M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H. N. Alshareef, J. Barnett, H. R. Harris, A.Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace, and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling ,” 36th European Solid-State Device research Conference, Montreaux, Switzerland, September 18-22, 2006.

85) P. Zhao, M. Kim, B.Gnade and R. Wallace, “The Thermal Stability Studies of FUSI NiSi with Dopants on Silicon on Insulator (SOI) for 45 nm CMOS and Beyond,”  MRS Spring Symposium, San Francisco, April 18, 2006.

84) P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade and R. M Wallace, “Effect of Nitrogen Incorporation on the Thermal Stability of La, Hf-Aluminate High-k Gate Dielectrics on Si (100),” MRS Spring Symposium, San Francisco, April 18, 2006.

83) D.K. Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E. Gnade, M.J. Kim,  “Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,” Microscopy and Microanalysis Chicago, 2006.

82) H. Jia, E. Gross, R.M.Wallace and B.E.Gnade, “Patterning Effects on Poly (3-hexylthiophene) Organic Thin Film Transistors using Photolithographic Processes,” Fall Materials Research Society Meeting, November 29, 2006, Boston, MA, 2006.

81) P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang,  G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and  R. Jammy,  “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” IEEE Intl. Electron Dev. Meeting, 2006.

80) B. Gnade, “Nano-structured Materials and Processes for Macro-electronics”, NanoTX06, Dallas, TX, Sept. 28 (2006) – Invited.

79) G. Pant, M.J. Kim, B.E. Gnade, R.M. Wallace, M. Quevedo-Lopez, S. Krishnan, P.D> Kirsch, B.H. Lee and R. Jammy, “Thickness, Morphology and Mobility: A study of Hf-based Dielectric Performance”, 2006 Int. Symp. on Advanced Gate Stack Technol., Austin, TX, Sept. 27, 2006.

78) P. Zhao, M.J. Kim, B.E. Gnade and R.M. Wallace, “Thermal Stability of FUSI NiSi Gate Stacks”, 2006 Int. Symp. on Advanced Gate Stack Technol., Austin, TX, Sept. 27, 2006.

77) C. Mathews, S. Satija, J. Kim, B.E. Gnade, R.M.Wallace G.Albrecht, A. Li’Fatou, S.Summerfelt, K.R. Udayakumar, and T.Moise, “Hydrogen Barriers for Ferroelectric Memories”, IEEE Semiconductor Interface Specialists Conference, December 1-3, 2006.

76) R.T. Bate, W.P. Kirk, R. Agrawal, R.M. Wallace, B.E. Gnade, G. Pant, “Channel Drift Mobility in High-k Transistors from Galvanomagnetic Measurements”, AVS 53rd International Symposium, San Francisco, CA, November 12, 2006.

75) M. Kim, T. Lee, J. Kim, R. Wallace and B. Gnade, “Si-Based Resonant Tunneling Devices Using UHV Wafer Bonding", 2006 ECS Joint International Meeting, Cancun, Mexico, November 3, 2006.

74) T. Boescke, M. Quevedo-Lopez, C. Krug, P. Kirsch, S. Govindarajan, G. Pant, B. Gnade, J. Price, P. Hung, G. Moore, S. Lanee and B. Lee, "Direct Comparison of Ultrathin HfO2/HfxZryO2/ZrO2 Dielectrics in High-K Metal Gate Stacks", 2006 ECS Joint International Meeting, Cancun, Mexico, November 3, 2006.

73) B.E. Gnade, “Materials and Processes for Flexible Electronics”, 2006 Distinguished Speaker Series Micro and Nano-Systems, University of Texas at Arlington, April 18, 2006.

72) B.E. Gnade, “Materials and Processes for Flexible Electronics”, University of North Texas Materials Science Colloquium, April 12, 2006.

71) B.E. Gnade, “Materials and Processes for Flexible Electronics”, IEEE Circuits and Systems Dallas Chapter Seminar, April 11, 2006.

70) B.E. Gnade, “Materials and Processes for Flexible Electronics”, University of Toronto, Dept. of Chemistry Colloquium, April 7, 2006.

69) M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. J. Peterson, B .H. Lee, G. Pant, B.E. Gnade, M. J. Kim, and R. M. Wallace, “Enhanced Reliability In Ultra-Scaled HfSiON Gate Dielectrics Through Suppressed Crystallization,” IEEE Semiconductor Interface Specialists Conference, December 1-3, 2005.

68) D. K. Cha, J Huang, T Zheng, J.B Jeon, T.H Lee, Jiyoung Kim, R.M Wallace, B.E Gnade and M.J Kim, “ In-situ nano fabrication and electrical characterization for TiO2 nanotubes using dual beam focused ion beam and nanomanipulator,” MRS Fall Symposium, November 29, 2005.

67) T. Zheng, Y. Ai, D. K. Cha, J Huang, G. Pant, H. Jia, M. J. Kim, R. M. Wallace and Bruce Gnade, “Insitu direct measurement of electrical properties of micron size Metal-Oxide-Silicon (MOS) capacitor by using Nanoprobe embedded Scanning Electron Microscopy (SEM),” MRS Fall Symposium, November 28, 2005.

66) P. Sivasubramani, P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “ The Effect of Nitrogen Incorporation on the Thermal Stability of La, Hf-aluminate Gate Stacks on Silicon,” AVS 52nd International Symposium, October 31, 2005.

65) P. Zhao, J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace, “The Effects of Nitrogen and Silicon Compositions on Work Function and Thermal Stability of MoXSiYNZ/SiO2 Gate Stack,” SRC Techcon 2005, Portland, OR, October 24, 2005.

64) P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Thermal Stability of Amorphous LaAlO3 Thin Films on Si(100) Deposited by Plasma Sputtering and Molecular Beam Deposition,” SRC Techcon 2005, Portland, OR, October 25, 2005.

63) P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” International Conference on Solid State Devices and Materials, Kobe, Japan, September 15, 2005.

62) D.K. Cha, Yuming Ai, J. Huang, T. Zheng, R.M. Wallace, B.E. Gnade and M.J. Kim , “In-situ Electrical Characterization of Nano-Interconnect Structures in the FIB,”, Miscroscopy and Microanalysis 2005, Honolulu, Hawaii – USA, August 3, 2005. 61) Huiping Jia, Srinivas Gowrisanker. Gaurang K. Pant, Robert M. Wallace, Bruce E. Gnade, “Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties”, AVS 52 International Symposium, Boston MA, October 30, 2005 (Contributed).

60) P. Zhao, M. J. Kim, B. E. Gnade and R. M. Wallace, “Ni diffusion studies from NiSi/Hf-based high-K dielectric stack into Si”, AVS 52 International Symposium, Boston MA, October 30, 2005 (Contributed).

59) Bruce Gnade, “Fabrication and Characterization of Permeation Barriers for Flexible Substrates”, SPIE Defense & Security Symposium, Future Display Technologies, Orlando FL, March 30, 2005 (Invited).

58) Bruce Gnade, “Electronic Materials Research at the University of Texas at Dallas”, XXIV Congresso Annual of Sociedad Mexicana Ciencia y Technologia de Superficies Materiales A.C., Sept. 27, 2004, Riveria Maya, Mexico (Invited).

57) Bruce Gnade, “Materials and Processes for Flexible Electronics”, XXIV Congresso Annual of Sociedad Mexicana Ciencia y Technologia de Superficies Materiales A.C., Sept. 27, 2004, Riveria Maya, Mexico (Invited Plenary Lecture).

56). I.S. Jeon, J. Lee, P. Zhao, P. Sivasubramani, T. Oh, H.Y. Kim, D. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim, and R.M. Wallace, “A Novel Method on Tuning Work Functions of Metal Gate Using Stacked Bi-Metal Lyers”, IEDM, San Francisco (2004).

55). P. Punchaipetch, G. Pant, R.M. Wallace, B.E.Gnade, “Low Temperature Gate Dielectric for Organic Thin-Film Transistors on Plastic Substrates”, AMLCD Conference, Tokyo, JP. Aug. 25-27, (2004). (Contributed).

54). Penghui Zhao, Prasanna Sivasubramani, In-sang Jeon, Jiyoung Kim, B.E. Gnade and R. M. Wallace “Physical and electrical properties of MoXNY and MoXSiYNZ as gate electrode materials for MOS devices”, AVS 51st International Symposium and Exhibition, Anaheim, CA, November 14, 2004. (Contributed)

53). Prasanna Sivasubramani, Penghui Zhao, In Sang Jeon, J. Lee, Jiyoung, Kim, , J. LeeJiyoung Kim, M.J. Kim, B.E. Gnade and R.M. Wallace, “Characteristics of MoxSiy gate electrodes for advanced CMOS applications”, AVS 51st International Symposium and Exhibition, Anaheim, CA, November 14, 2004. (Contributed)

52). B.Gnade, “Materials and Processes for Flexible Electronics”, Texas Instruments, Dallas, TX, April 8, 2004. (Invited)

51. B.Gnade, “Materials and Processes for Flexible Electronics”, TechTextil North America, Atlanta, Ga., March. 31, 2004. (Invited)

50). B. Gnade, “Materials and Processes for Flexible Electronics”, Zyvex Corp., March. 26, 2004. (Invited)

49). B.Gnade and Robert Wallace, “Electronic Materials Activities at UTD”, Queretaro University, Queretaro, Mexico, March 5, 2004. (Invited)

48). B. Gnade, “Materials and Processes for Flexible Electronics”, Naval Research Laboratories Optical Materials Division Colloquium, Dec. 17, 2003. (Invited)

47)7. B. Gnade, “Transistors for Wearable Computers”, The 5th International Workshop on Future Information Processing Technologies, Miyazaki, Japan, Nov. 10-13, 2003 (Invited Poster).

46). B. Gnade and B. Chalamala, “Carbon Nanotubes for FEDs”, Society for Information Display International Symposium, Seminar and Exhibition, May 19, 2003, Baltimore, MD (Invited Seminar).

45). B. Gnade, “Processing Issues with High K Gate Dielectrics on Silicon”, 15th International Symposium on Integrated Ferroelectrics, March 11, 2003, Colorado Springs (Invited).

44). S. Addepalli, P. Sivasubramani, P. Zhao, M.J. Kim, M. El-Bouanani, B.E. Gnade and R.M. Wallace, “Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies”, APS Spring meeting, March 5, 2003, Austin, TX (contributed).

43). S. Addepalli, P. Sivasubramani, P. Zhao, M.J. Kim, M. El-Bouanani, B.E. Gnade and R.M. Wallace, “Hafnium silicate and hafnium silicon oxynitride gate dielectrics for strained SixGe1-x: Interface Stability”, APS Spring meeting, March 5, 2003, Austin, TX (contributed).

42). B. Gnade and R. Wallace, “Organic Transistors on Threads: A Building Block for Computational Fabric”, SRC ICSS System Design Review, Feb. 27, 2003, San Diego (Invited)

41). P. Punchaipetch, G. Pant, M. J. Kim, M. El-Bouanani, R. M. Wallace and B. E. Gnade, “Growth and characterization of hafnium silicate films formed by UV/ozone oxidation”, APS Spring meeting, March 5, 2003, Austin, TX (contributed).

40). G. Pant, P. Punchaipetch, M. J. Kim, R. M. Wallace and B. E. Gnade, “HfSiON by UV ozone oxidation with < 2nm EOT”, APS Spring meeting, March 5, 2003, Austin, TX (contributed).

39). B.E. Gnade, Physical and Electrical Properties of Hafnium Silicate as an Alternate Gate Dielectric for Silicon CMOS”, Electronic Materials and Devices Seminar, Princeton University, Dec. 16, 2002 (Invited).

38). B.E. Gnade, G. Pant, P. Punchaipetch, M.J. Kim, M. El-Bouanani, and R.M. Wallace, “Low Temperature Deposition of Hafnium Silicate Gate Dielectrics for TFTs on Plastic Substrates”, LEOS 2002 – 15th Annual Meeting of the IEEE Lasers & Electro-Optics Society, Glasgow, Scotland (Nov. 2002). (Invited).

37). M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R.M. Wallace, “Effect of Nitrogen in Boron Penetration from p+ Polycrystalline-Si through Hf-silicate Films”, Semiconductor Interfaces Specialists Conference (2002). (Contributed)

36. B. Gnade, “Electronic Materials and Device Research at UNT”, U.S. Army Soldier System Center, Natick, Mass. July 10, 2002. (Invited).

35). B. Gnade, “Military Applications of Large Area Electronics”, Defense Science Research Council Summer School, La Jolla, CA July 19, 2002. (Invited)

34). B. Gnade, T. Akinwande, G. Parsons, S. Wagner, and R. Shashidhar, “Active Devices on Fiber: The Building Blocks for Electronic Textiles”, International Interactive Textiles for the Warrior Conference, July 10, 2002 Cambridge, Mass. (Invited).

33). M.A. Quevedo-Lopez, H. Zhang, M.J. Kim, M. El-Bouanani, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. Li-Fateau, J.J. Chambers, A.L.P. Rotondaro, L. Colombo, “Dopant Penetration Studies in Hf Based Gate Dielectrics from Doped Polysilicon Films: Effect of Nitrogen in Penetration Robustness”, AVS 49th International Symposium, Nov. 4, 2002 (Contributed).

32). S. Addepalli, P. Sivasubramani, H. Zhang, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, “Hafnium Silicate and Nitrided Hafnium Silicate as Gate Dielectric Candidates for SiGe-based CMOS Technology”, AVS 49th International Symposium, Nov. 4, 2002 (Contributed).

31). B. Gnade, I. Akinwande, J. Larimer, and R. Shashidhar, “Display Bandwidth Reduction via Latched Pixels, and Processing at the Pixel”, SPIE Aerosense 2002, Orlando, FL April 4, 2002 (Invited).

30). B. Gnade, “Nanotechnology Efforts at the University of North Texas”, Nanotechnology Colloquium, IC2 Institute, University of Texas, Feb. 4, 2002.

29). G. Pant, P. Punchaipetch, M. A. Quevedo- Lopez, M. El Bouanani, R. M. Wallace and B. Gnade, “ Hafnium Silicate formation by the UV-Ozone Oxidation of Hafnium Silicide”, MRS Spring Meeting, San Francisco, April 1-5, 2002 (Contributed)

28). P. Punchaipetch, G. Pant, M. A. Quevedo-Lopez, H. Zhang, R. M. Wallace and B. Gnade, “Low Temperature Deposition of Zirconium and Hafnium Silicate Gate Dielectrics for Flexible Display Applications”, MRS Spring Meeting, San Francisco, April 1-5, 2002 (Contributed)

27). M. Quevedo-Lopez, P. Punchaipetch, G. Pant, M. El-Bouanani, M. Kim, B. E. Gnade and R. M. Wallace, L. Colombo, M. Bevan, M.Douglas, A. Li'fatou and M.Visokay, “Dopant Diffusion Studies from As-, B- and P-doped Polysilicon Through CVD Deposited Hf Silicate Thin Films”, MRS Spring Meeting, San Francisco, April 1-5, 2002 (Contributed)

26). M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, M.J.Bevan, A.Rotondaro and L. Colombo, “Thermal stability of high-k gate dielectrics on Si: Studies of metal incorporation from silicates into Silicon”, 32nd IEEE Semiconductor Interface Specialists Conference, Washington, D.C., November 30, 2001.

25). M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, B.E. Gnade and R.M. Wallace, L. Colombo, M. Bevan, M. Douglas, and M. Visokay, “Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates”, MRS Fall Meeting, Boston, Mass., November 28, 2001.

24). M.ElBounani, M. Quevedo-Lopez, , J.L.Duggan, B.E.Gnade, R.M. Wallace, L.Colombo, M.Bevan, M.Douglas, H.-Y.Liu, , M.Visokay, “Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates”, International Workshop on Device Technology, Porto Allegre, Brazil, September 2001.

23). M. Quevedo-Lopez, M.ElBounani, J.L.Duggan, B.E.Gnade, R.M. Wallace, L.Colombo, M.Bevan, M.Douglas, H.-Y.Liu, , M.Visokay, “Diffusion Studies of High k Gate Dielectric Candidates Hafnium and Zirconium Silicates into Si”, AVS National Symposium, San Francisco, CA, October, 29 2001.

22). B.E. Gnade, “Electronic Materials Research in the Laboratory for Electronic Materials at UNT”, EE Dept. Colloquium, Univ. of Texas at Dallas, Sept. 27, 2001.

21)1. B.E. Gnade, “Electronic Materials Research in the Laboratory for Electronic Materials at UNT”, EE Dept. Colloquium, Univ. of Arkansas, Fayetteville AK, Sept. 17, 2001.

20). B.E. Gnade and Peter Seats, “The Evolution of Flat Panel CRTs”, Society for Information Displays, San Jose, CA, June 7, 2001.

19). B. E. Gnade, Babu Chalamala and R. Reuss, “Short Course on Emissive Displays”, Society for Information Displays, San Jose, CA, June 3, 2001.

18). B.E. Gnade, “Vacuum Effects on Field Emitters”, National Institute of Standards and Technology, Gaithersburg, MD Aug. 1, 2000.

17). B.E. Gnade, “Novel High Permittivity Gate Dielectric Materials for Advanced Microelectronics: Materials Science of Zr and Hf Silicates”, 2000 Future Directions for Silicon Transistor Processing Strategic Technology Symposium, Hsin Chu, Taiwan, June 21, 2000.

16). B.E. Gnade, “Vacuum Effects on Field Emitters”, AVS XHV 2000 – Extreme High Vacuum & Surface Conditioning Workshop, Newport News, VA June 7, 2000.

15). B.E. Gnade, “Electronic Materials and Devices Lab”, Universidad Autonoma de Coahuila IV Simposium, Soltillo, Mexico May 18, 2000.

14). B.E. Gnade, “Novel High Permittivity Gate Dielectric Materials for Advanced Microelectronics: Materials Science of Zr and Hf Silicates”, Applied Materials Research Seminar, Palo Alto, CA April 21, 2000.

13). B.E. Gnade, “Large Area Flexible Substrates”, ISAT/DoD meeting on Computational Fabrics – Technology”, North Carolina State University, Raleigh NC, April 13, 2000.

12. B.E. Gnade, “Field Emission Displays”, IEEE LEOS Seminar, Dallas, TX Feb. 24, 2000.

11. B.E. Gnade, “Molecular Electronics”, UNT Chemistry Department Colloquium, Nov. 12, 1999.

10). B.E. Gnade, “The Physics and Chemistry of Field Emission Devices”, UNT Physics Department Colloquium, October 12, 1999.

9). B.E. Gnade, “The Physics and Chemistry of Field Emission Devices”, UNT Materials Science Department Colloquium, Sept. 1, 1999.

8). B.E. Gnade, “ The DAPRA Display Program”, DARPATech 1999, June 9, 1999.

7). B.E. Gnade, “The DARPA High Definitions Systems Program”, Materials Research Society, April 9, 1999.

6). B.E. Gnade, “Physics and Chemistry of Field Emission Displays”, Princeton Univ. Electrical Engineering Department Colloquium, March 8, 1999.

5). B.E. Gnade, “Current Status of Field Emission Displays”, 45th International Symposium of the American Vacuum Society, Baltimore, MD, Nov. 2, 1998.

4). B.E. Gnade, “DoD High Definition Systems Program”, 45th International Symposium of the American Vacuum Society, Baltimore, MD, Nov. 2, 1998.

3). B.E. Gnade, “DoD High Definition Systems Program”, Univ. of Texas, Dallas, Elec. Eng. Dept. Colloquium, Oct. 15, 1998.

2). B.E. Gnade, “Current Status of Field Emission Displays”, The 4th International Conference on the Science and Technology of Display Phosphors, Bend Oregon, Sept. 14-17, 1998.

1). B.E. Gnade, “DoD High Definition Systems Program”, 5th Annual Strategic and Technical Symposium, Society for Information Displays, Univ. of Michigan, Sept. 9, 1998.