Issued Patents


Foreign Patents

Issued Patents

70) B.E. Gnade and R.M. Wallace, “Method for Using Field Emitter Arrays in Chemical and Biological Hazard Mitigation and Remediation”, U.S. Pat. # 7,288,171 (2007).

69) I. Gory, B. Gnade, F. Mantiziba, “Stiction Resistant Release Process”, U.S. Pat. # 7,087,456 (2006).

68) M.A. Quevedo Lopez, R.M. Wallace, M. El Bouanani and B.E. Gnade, “Method of Removing Contaminants on a Substrate”, U.S. Pat. # 6,933,235 (2005).

67) R.M. Wallace and B.E. Gnade, “Gate Structure and Method”, U.S. Pat. # 6,784,507 B2 (2004).

66) D.M. Smith, P. Johnston, W.C. Ackerman, R.A. Stoltz, A. Maskara, T. Ramos, S.P. Jeng, B.E. Gnade, “Low Volatility Solvent-Based Method for Forming Thin-Film Nanoporous Aerogels on Semiconductor Substrates”, U.S. Pat. # 6,645,878 B2 (2003).

65) S.R. Summerfelt, H.R. Beratan, and B.E. Gnade, “Lightly donor doped electrodes for high-dielectric-constant materials”, U.S. Pat. #6,593,638 (2003).

64) D.M. Smith, G.P. Johnson, W.C. Ackerman, S.-P. Jeng, B.E. Gnade, “Aerogel Thin Film Formation from Multi-Solvent Systems”, U.S. Pat. # 6,437,007 B1 (2002).

63) W.P. Kirk, J.X. Zhou, B.E. Gnade, C.-C. Cho, “Method of Forming Lattice Matched Layer over a Surface of a Silicon Substrate”, U.S. Pat. # 6,419,742 B1 (2002).

62) D.M. Smith, G.P. Johnston, W.C. Ackerman, R.A. Stoltz, A. Maskara, T. Ramos, S-P. Jeng, and B.E. Gnade, “Low Volatility Solvent-Based Method for Forming Thin-Film Nanoporous Aerogels on Semiconductor Substrates”, U.S. Pat. # 6,380,105 B1 (2002).

61) S.V. Hanttangady, R.M. Wallace, B.E. Gnade, and Y. Okuno, “Integrated Dielectric and Method”, U.S. Pat. # 6,335,238 (2002).

60)  S.R. Summerfelt, H.R. Beratan, and B.E. Gnade, “Lightly donor doped electrodes for high-dielectric-constant materials”, U.S. Pat. #6,319,542 (2001).

59)  B.E. Gnade and S.R. Summerfelt, “Electrical connections to dielectric materials”, U.S. Pat. #6,275,370 (2001).

58) B.E. Gnade and S.R. Summerfelt, “Electrical connections to dielectric materials”, U.S. Pat. #6,215,650 (2001).

57) S.R. Summerfelt, H.R. Beratan, B. Gnade, “Lightly donor doped electrodes for high- dielectric-constant materials”, U.S. Pat. # 6,204,069 (2001).

56) C.-C. Cho, B.E. Gnade, D.M. Smith. J. Changming, W.C. Ackerman, and G.C. Johnston, “Porous Dielectric Material with Improved Pore Surface for Electronics Applications”, U.S. Pat. 6,140,252 (2000).

55) D.M. Smith, G.P. Johnston, W.C. Ackerman, S-P. Jeng, and B.E. Gnade, “Aerogel Thin Film Formation from Multi-Solvent Systems”, U.S. Pat. 6,130,152 (2000).

54) B. Gnade, S. Summerfelt, and P. Kirlin, “Method of forming sidewall capacitance structure”, U.S. Pat. 6,033,919 (2000).

53) D.M. Smith, G.P. Johnston, W.C. Ackerman, R.A. Stoltz, A. Maskara, T. Ramos, S.-P. Jeng, B.E. Gnade, "Low Volatility Solvent-Based Method for Forming Thin Film Nanoporous Aerogels on Semiconductor Substrates", U.S. Pat. 5,955,140 (1999).

52) J.D. Levine, C.C. Shen, and B.E. Gnade, “Method of Making an Ambient Light Absorbing Face Plate for Flat Panel Display”, U.S. Pat. 5,911,616 (1999).

51)  J.D. Levine, C.C. Shen, and B.E. Gnade, “Flat Panel Display Anode Plate Having Isolation Grooves”, U.S. Pat. 5,871,383 (1999).

50) S.R. Riley, K. Balkus, B.E. Gnade, “Method of Forming a Capacitance Type Gaseous Sensing Device and Apparatus Thereof”, U.S. Pat. 5,857,250 (1999).

49) C.-C. Cho, B.E. Gnade, D.M Smith, J. Changming, W.C. Ackerman, and G.C. Johnston, "Porous Dielectric Material with Improved Pore Surface Properties for Electronic Applications", U.S. Pat. 5,847,443 (1998).

48) S.R. Riley, K. Balkus, B.E. Gnade, “Method of Forming a Capacitance Type Gaseous Sensing Device and Apparatus Thereof”, U.S. Pat. 5,828,542 (1998).

47) B.E.  Gnade, C.C. Cho, D.M. Smith, " Method of Making a Low Dielectric Constant Material for Electronics”, U.S. Pat. 5,804,508 (1998).

46) B.E.  Gnade, C.C. Cho, D.M. Smith, "Low dielectric constant material for Electronic Applications”, U.S. Pat. 5,789,819 (1998).

45) S-P. Jeng, B.E. Gnade, “Method of Making a Hydrogen-rich, Low Dielectric Constant Gate Insulator for Field Emission Device”, U.S. Pat. 5,772,485 (1998).

44) B.E. Gnade, C.-C. Cho, and D.M. Smith, “Low Dielectric Constant Layers via Immiscible Sol-Gel Processing”, U.S. Pat. 5,750,415 (1998).

43) R.H. Havemann, S.-P. Jeng, B.E. Gnade, C.-C. Cho, “Interconnect Structure with an Integrated Low Density Dielectric”, U.S. Pat. 5,747,880 (1998).

42) S.-P. Jeng, J.J. Lin, B.E. Gnade, and D.I. Robbins, “Method of Forming Spacers for a Flat Panel Display Apparatus”, U.S. Pat. 5,733,160 (1998).

41) C.-C. Cho, B.E. Gnade, and D.M. Smith, “Porous Dielectric Material with Improved Pore Surface Properties for Electronics Applications”, U.S. Pat. 5,723,368 (1998).

40) R.M Wallace, J.M. Anthony, B.E. Gnade, and C.-C. Cho, “Anode Plate for Flat Panel Display Having Integrated Getter”, U.S. Pat 5,689,151 (1997).

39) S-P. Jeng, B.E. Gnade, “Hydrogen-rich, Low Dielectric Constant Gate Insulator for Field Emission Device”, U.S. Pat. 5,684,356 (1997).

38) R.H. Havemann, B.E. Gnade, C-C Cho,  “Porous Dielectric Material with a Passivation Layer for Electronics Applications”,  U.S. Pat. 5,661,344 (1997).

37) B.E. Gnade, D.G. Evans, S.R. Summerfelt, J.D. Levine, “Method of Making an Anode Plate for use in a Field Emission Device”, U.S. Pat. 5,643,033 (1997).

36) S.R. Summerfelt, H.R. Beratan, B.E. Gnade, “High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers”, U.S. Pat. 5,619,393 (1997).

35) R.M. Wallace, B.E. Gnade, W.P. Kirk, “Anode plate for flat panel display having silicon getter”, U.S. Pat. 5,614,785 (1997).

34) K.G. Vickers, L.A. Files, C.C. Shen, B.E. Gnade, “Method for Improving Flat Panel Display Anode Plate Phosphor Efficiency”, U.S. Pat.  5,611,719 (1997).

33) J.D. Levine, C.C. Shen, B.E. Gnade, “Ambient Light Absorbing Face Plate for Flat Panel Display”, U.S. Pat. 5,608,286 (1997).

32) K.G. Vickers, C.C. Shen, B.E. Gnade, J.D. Levine, “Black Matrix SOG as an Interlevel Dielectric in a Field Emission Device”, U.S. Pat. 5,608,285 (1997).

31) J.D. Levine, B.E. Gnade, “Tetrode Arrangement for Color Field Emission Flat Panel Display With Barrier Electrodes on the Anode Plate”, U.S. Pat. 5,606,225  (1997).

30) S.R. Summerfelt, H.R. Beratan, P.S. Kirlin, B.E. Gnade, “High-Dielectric-Constant Material      Electrodes Comprising Thin Platinum Layers”,  U.S. Pat 5,581,436  (1996).

29) K.G. Vickers, C.C. Shen, B.E. Gnade, J.D. Levine, “Method for Fabricating a Field Emission Device                       Having Black Matrix SOG as an Interlevel Dielectric”, U.S. Pat. 5,577,943 (1996).

28) S.R. Summerfelt, H.R. Beratan, P.S. Kirlin, B.E. Gnade, “High-Dielectric-Constant Material      Electrodes Comprising Thin Platinum Layers”,  U.S. Pat 5,576,928  (1996).

27) B.E. Gnade, C.C. Cho, J.D. Levine, “Low Density, High Porosity Material as Gate Dielectric for Field Emission Device”, U.S. Pat. 5,569,058 (1996).

26) S.R. Summerfelt, H.R. Beratan,  P.S. Kirlin, B.E. Gnade, “High-Dielectric-Constant Material Electrodes Comprising Thin Platinum Layers”, U.S. Pat.  5,566,045 (1996).

25) B.E. Gnade, C.C. Cho, D.M. Smith, “Porous Composites as a Low Dielectric Constant Material for Electronics Applications”, U.S. Pat. 5,561,318 (1996).

24) R.H. Taylor, K.G. Vickers, B.E. Gnade, A.M Wilson, C.E. Primm, “Field Emission Microtip Clusters Adjacent Stripe Conductors”, U.S. Pat. 5,556,316 (1996).

23) R.H. Taylor, K.G. Vickers, B.E. Gnade, A.M Wilson, C.E. Primm, “Field Emission Microtip Clusters Adjacent Stripe Conductors”, U.S. Pat. 5,557,159 (1996).

22)  R.H. Taylor, K.G. Vickers, B.E. Gnade, A.M. Wilson, C.E. Primm, “Clustered Field Emission Microtips Adjacent Stripe Conductors”, U.S. Pat. 5,536,993 (1996).

21)  B.E. Gnade, D.G. Evans, S.R. Summerfelt, and J.D. Levine, “Anode Plate with Opaque Insulating Material for use in a Field Emission Display”, U.S. Pat. 5,528,102 (1996).

20)  B.E. Gnade, C.C. Cho, and J.D. Levine, “Low Density, High Porosity Material as Gate Dielectric for Field Emission Device”, U.S. Pat. 5,525,857 (1996).

19) R.M. Wallace, D. A. Webb, and B.E. Gnade, “Self-Assembled Monolayer Coating for Micro-Mechanical Devices”, U.S. Pat. 5,523,878 (1996).

18)  C.C. Cho, B.E. Gnade, and D.M. Smith, “Porous Dielectric Material with Improved Pore Surface Properties for Electronics Applications”, U.S. Pat. 5,523,615 (1996).

17) R.M. Wallace, B.E. Gnade, C.C. Shen, J.D. Levine, and R.H. Taylor, “Method of Making a Field Emission Device Anode Plate Having an Integrated Getter”, U.S. Pat. 5,520,563 (1996).

16)  C.C. Cho, B.E. Gnade, and D.M. Smith, “Porous dielectric material with improved pore surface properties for electronics applications”, U.S. Pat. 5,504,042 (1996).

15)  D.A. Webb and B.E. Gnade, “Method for fabricating a DMD spatial light modulator with a hardened hinge”, U.S. Pat. 5,504,614 (1996).

14)  B.E. Gnade, C.C. Cho, and D.M. Smith “Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications”, U.S. Pat. 5,494,858 (1996).

13)  J.D. Levine, C.C. Shen, and B.E. Gnade, “Flat Panel Display Anode Plate Having Isolation Grooves”, U.S. Pat. 5,491,376 (1996).

12)  R.H. Havemann, S.P. Jeng, B.E. Gnade, C.C. Cho, “Method of making an interconnect structure with an integrated low density dielectric”, U.S. Pat. 5,488,015 (1996).

11)  B.E. Gnade, R.F. Pinizzotto, and C.L. Littler, "Three Dimensional Ferroelectric Integrated Circuit Without Insulation Layer Between Memory Layers", U.S. Pat. 5,487,031 (1996).

10)  R.H. Havemann, B.E. Gnade, C.C. Cho, “Method of fabricating porous dielectric material with a passivation layer for electronics applications”, U.S. Pat. 5,472,913 (1995).

9) B.E.  Gnade, C.C. Cho, D.M. Smith, "Method of making a semiconductor device using a low dielectric constant material”, U.S. Pat. 5,470,802 (1995).

8) R.M. Wallace, B.E. Gnade, C.C. Shen, J.D. Levine, and R.H. Taylor, “Anode Plate for Flat Panel Display Having Integrated Getter”, U.S. Pat. 5,453,659 (1995).

7) B.E. Gnade, R.F. Pinizzotto, and C.L. Littler, "Three Dimensional Ferroelectric Integrated Circuit Without Insulation Layer Between Memory Layers", U.S. Pat. 5,375,085 (1995).

6)  B.E. Gnade, S.R. Summerfelt, “Method of Forming Electrical Connections to High Dielectric Constant Materials”, U.S. Pat. 5,348,894 (1994).

5) R.M. Wallace, B.E. Gnade, "Directed Effusive Beam Atomic Layer Epitaxy System and Method", U.S. Pat. 5,316,793 (1994).

4) C.C. Cho, B.E. Gnade, "Via Filling by Single Crystal Aluminum", U.S. Pat. 5,262,361 (1993).

3) C.C. Cho, T.S. Kim, B.E. Gnade, Y. Nishioka, and H-Y Liu, "Method of Improving the Interface Characteristics of CaF2 on Silicon", U.S. Pat 5,229,333 (1993).

2) B.E. Gnade and J.A. Keenan, "Apparatus and Process for testing leaks in packaging for integrated circuits", U.S. Pat. 5,001,343 (1991).

1) J.H. Tregilgas and B. Gnade, "Semiconductor Purification by Solid State Electromigration", U.S. Pat. 4,675,087 (1987).

 

 
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