Bruce Gnade

101) S. Govindarajan, T.S. Boscke, P. Sivasubramani, P.D. Kirsch, B.H. Lee, H.-H. Tseng, R. Jammy, U. Schroder, S. Ramanathan, B.E. Gnade, “Higher permittivity rare earth doped HfO2 for sub-45 nm metal-insulator-semiconductor devices”, Appl. Phys. Lett. 91, 062906 (2007).

100) T.S. Boscke, S. Govindarajan, P.D. Kirsch, P.Y. Hung, C. Krug, B.H. Lee, J. Heitmann, U. Schroder, G. Pant, B.E. Gnade, W.H. Krautschneider, “Stabilization of high-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors”, Appl. Phys. Lett. 91, 072902 (2007).

99) H.N Alshareef, C. Huffman, H.C. Wen, M. Quevedo-Lopez, B.E. Gnade, M. El-Bouanani, “Impact of Carbon Incorporation on the Effective Work Function of Metal Nitride Gate Electrodes”, submitted to Electrochemical and Solid-State Letters (August 2007).

98) T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “CV measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe”, Rev. Sci. Instrum. 78, 104702 (2007).

97) P. Sivasubramani, J. Kim, M.J. Kim, B.E. Gnade, R.M. Wallace, “Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)”, J. Appl. Phys. 101, 114108 (2007).

96) Yuming Ai, Srinivas Gowrisanker, Huiping Jia, Isaac Trachtenberg, Eric Vogel, Robert M. Wallace, Bruce E. Gnade, Raymond Barnett, Harvey Stiegler, Hal Edwards, “14MHz Organic Diodes Fabricated Using Photolithographic Processes”, Appl. Phys. Lett. 90, 262105 (2007).

95) P. Sivasubramani, H.T. Lee, M.J. Kim, J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, F.A. Stevie, R. Garcia, Z. Zhu and D.P. Griffis, “Thermal stability of lanthanum scandate dielectrics in Si(100)”, Appl. Phys. Lett. 89, 242907 (2006).

94) M.M. Hussain, M.A. Quevedo-Lopez, H. Al-Shareef, H.-C. Wen, D. Larison, B.E. Gnade, M. Elbounani, “Thermal annealing effects on a high-k/metal film stack”, Semiconductor Science and Technol. 21, 1437 (2006).

93) M. Hussain, M. Quevedo, H. Al-Shareef, D. Larison, K. Mathur, B.E. Gnade, "Deposition Method-Induced Stress Effect on Ultra Thin Titanium Nitride (TiN) Etch Characteristics", Electrochemical and Solid-State Letters 9, G361 (2006).

92) P. Zhao, M.J. Kim, B.E. Gnade and R.M. Wallace, “Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-κ gate stacks”, J. Appl. Phys. 101, 053504 (2007).

91) H. Jia, E.K. Gross, R.M. Wallace and B.E. Gnade, “Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes”, Organic Electronics 8, 44 (2007).

90) P. Sivasubramani, J. Kim, M.J. Kim, B.E. Gnade and R.M. Wallace, “The Effect of Nitrogen Incorporation on the Thermal Stability of Sputter Deposited Lanthanum Aluminate Dielectrics on Si(100)”, Appl. Phys. Lett. 89, 152903 (2006).

89) P.D. Kirsch, M.A. Quevedo-Lopez, S.A. Krishnan, G. Pant, M.J. Kim, R.M. Wallace, B.E. Gnade, and B.H. Lee, “Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics”, Appl. Phys. Lett. 89, 242909 (2006).

88) M.A. Quevedo-Lopez, S. Krishnan, P.D. Kirsch, H.N. Alshareef, B.E. Gnade, M.J. Kim, R.M. Wallace, B.H. Lee and R. Jammy, “Structure-Property Relationships in Ultrathin Hf-Based Gate Dielectrics”, Future Fab 21, 114 (2006).

87) H. Jia, S. Gowrisanker, G.K. Pant, R.M. Wallace and B.E. Gnade, “Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties”, J. Vac. Sci. Technol. A24, 1228 (2006).

86) G. Pant, A. Gnade, M. J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez, P.D. Kirsch, and S. Krishnan, “Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics”, Appl. Phys. Lett.89, 032904 (2006).

85) H.N. Alshareef, K. Choi, H.C. Wen, H.F. Luan, H.R. Harris, Y. Senzaki, P. Majhi, B.H. Lee, R. Jammy, S. Aguirre-Tostado, B.E. Gnade, R.M. Wallace, “Composition dependence of the work function of Ta1-xAlxNy metal gates”, Appl. Phys. Lett. 88, 072108 (2006).

84) P. Zhao, I. Trachtenberg, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Ni diffusion studies from fully silicided NiSi into Si”, Electrochemical and Solid-State Letters 9, G111-G113 (2006).

83) G. Pant, A. Gnade, M. J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez and P.D. Kirsch, “Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics”, Appl. Phys. Lett. 88, 032901 (2006).

82) M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, G. Pant, B.E. Gnade, and R.M. Wallace, “Ultra-scaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability”, Appl. Phys. Lett. 87, 262902 (2005).

81) T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Characterization of conductance under finite bias for Self-Assembled Monolayer coated Au quantum point contact”, Appl. Surf. Sci.. 253, 1265 (2006).

80) H. Jia, G.K. Pant, E.K. Gross, R.M. Wallace and B.E. Gnade, “Gate induced leakage and drain current offset in organic thin film transistors”, Organic Electronics 7, 16 (2006).

79) P. Sivasbramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, H.S. Craft and J.P. Maria, “Out-diffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)”, Appl. Phys. Lett. 86, 201901 (2005).

78) M. Panhuis, S. Gowrisanker, D.J. Vanesko, C. Mire, H. Jia, H. Xie, R.H. Baughman, I.H. Musselman, B.E. Gnade, G.R. Dieckmann, R.K. Draper, “Nanotube Network Transistors from Peptide-Wrapped Single-Walled Carbon Nanotubes”, Small 1, 820-823 (2005).

77) S. Addepalli, P. Sivasubramani, M.J. Kim, B.E. Gnade and R.M. Wallace, “The Electrical Properties and Stability of the Hafnium Silicate / Si0.8Ge0.2 (100) Interface”, J. Electronic Mat. 33, 1016-1021 (2004).

76) C. Nistorica, J.-F. Liu, I. Gory, G. Skidmore, F.M. Mantiziba, B.E. Gnade and J. Kim, “Tribological and wear studies of ALD and SILAR coatings for microelectromechanical devices”, J. Vac. Sci. Technol A. 23, 836 (2005).

75) A. Ranade, N.A. D’Souza, R.M. Wallace, B.E. Gnade, “High Sensitivity Gas Permeability Measurement System for Thin Plastic Films”, Rev. Sci. Instrum. 76, 013902 (2005).

74) Jun-Fu Liu, Corina Nistorica, Igor Gory, George Skidmore, Fadzi Mantiziba and Bruce E Gnade, “Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in Si-based microelectromechanical devices”, Thin Solid Films 292, 6 (2005).

73) A. Jakubowicz, H. Jia, R.M. Wallace and B. Gnade, “Adsorption Kinetics of p-Nitrobenzenethiol Self-Assembled Monolayers on a Gold Surface”, Langmuir 21, 950-955 (2005).

72) C. M. Soto, A. Szuchmacher Blum, C.D. Wilson, J. Lazorcik, M. Kim, B. Gnade, B. R. Ratna, “Separation and recovery of intact gold-virus complex by agarose electrophoresis and electroelution: Application to the purification of cowpea mosaic virus and colloidal gold complex”, Electrophoresis 25, 2901-2906 (2004).

71) T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Stabilization of Au Quantum Point Contacts by Self-Assembled Monolayers”, Appl Surface Science 252, 8261 (2006).

70) F. Mantiziba, I. Gory, G. Skidmore and B. Gnade, “Wet Etch Release Process for Silicon Micromachined Structures using Polystyrene Microsheres for Improved Yield”, J. Microelectromechanical Systems 14, 598-602 (2005).

69) R.P. Pezzi, L. Miotti, K.P. Bastos, G.V. Soares, C. Driemeier, I.J.R. Baumvol, P. Punchaipetch, G. Pant, B.E. Gnade, R.M. Wallace, A. Rotondaro, M. Visokay, J.J. Chambers, and L. Colombo, “Hydrogren and deuterium incorporation and transport in hafnium-based dielectric films on silicon”, Appl. Phys. Lett. 85, 3540-3542, (2004).

68) Ajit Ranade, Nandika Anne D'Souza, Bruce Gnade and Amit Dharia, “Nylon 6 and Montmorillonite Layered Silicate (MLS) Nanocomposites”, J. Plastic Film and Sheeting 19, 271-286 (2003).

67) C. Driemeier, K.P. Bastos, G.V. Soares, L. Miotti, R.P. Pezzi, I.J. R. Baumvol, P. Punchaipetch, G. Pant, B.E. Gnade, R.M. Wallace, “Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics”, Appl. Phys. A: Materials Science and Processing 80, 1045-1047 (2005).

66) M.A. Quevedo-Lopez, M.R. Visokay, J.J. Chambers, M.J. Bevan, A. Lifatou, L. Colombo, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Dopant Penetration through HF-Silicate”, J. Appl. Phys. 97, 043508 (2005).

65) Amy Szuchmacher Blum, Carissa M. Soto, Charmaine D. Wilson, John D. Cole, Moon Kim, Bruce Gnade, Anju Chatterji, Wendy F. Ochoa, Tianwei Lin, John E. Johnson, and B. R. Ratna, “Cowpea Mosaic Virus as a Scaffolding for 3-D Patterning of Gold Nanoparticles”, Nano Letters 4, 867-870 (2004).

64) Gaurang Pant, P. Punchaipetch, M.J.Kim, R.M. Wallace and B.E. Gnade, “Low Temperature UV/ozone oxidation formation of HfSiON gate dielectric”, Thin Solid Films 460, 242-246 (2004).

63) P. Punchaipetch, G. Pant, M.J.Kim, R.M. Wallace and B.E. Gnade, “Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation”, J. Vac. Science Tech. A22, 395-400 (2004).

62) P. Punchaipetch, Gaurang Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade, “Low temperature deposition of hafnium silicate gate dielectrics”, IEEE Journal of Selected Topics in Quantum Electronics 10, 89-100 (2004).

61) S. Addepalli, P. Sivasubramani, M. El-Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Deposition of Hf-silicate gate dielectric on SixGe1-x(100): detection of interfacial layer growth”, J. Vac. Science Tech. A22, 616-623 (2004).

60) M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B. E. Gnade, R. M. Wallace, M.R. Visokay, A. LiFatou, J.J. Chambers and L. Colombo, “Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films”, Appl. Phys. Lett. 82, 4669 (2003).

59) P. Punchaipetch, Gaurang Pant, M. Quevedo-Lopez, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade, “Hafnium silicate formation by UV Ozone oxidation of hafnium silicide”, Thin Solid Films 425, 68 (2003).

58) M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B. E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R. M. Wallace, “Phosphorous and Arsenic Penetration Studies Through HfSixOy and HfSixOyNz Films”, Appl. Phys. Lett. 81, 1609 (2002).

57) M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B. E. Gnade, R. M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan and L. Colombo, “Boron penetration studies from p+ polycrstalline Si through HfSixOy”, Appl. Phys. Lett. 81, 1074 (2002).

56) M. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace and B. E. Gnade, “Wet Chemical Etching Studies of Zr- and Hf- Silicate Gate Dielectrics”, J. Vac. Science Tech. A20, 1891 (2002).

55) M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, B. E. Gnade, R. M. Wallace, M.Visokay, M.Douglas, M.J. Bevan and L. Colombo, “Interdiffusion studies for HfSixOy and ZrSixOy on Si”, J. Appl. Phys. 92, 3540 (2002).

54) Ranade, N.A. D’Souza, and B. Gnade, “Exfoliated and intercalated polyamide-imide nanocomposites with montmorillonite”, Polymer 43, 3759 (2002).

53) M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J.L. Duggan, B.E. Gnade, R.M. Wallace, M. Visokay, M. Douglas, M.J. Bevan and L. Colombo, “Thermally induced Zr incorporation into Si from zirconium silicate thin films”, Appl. Phys. Lett. 79, 2958 (2001).

52) M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, C. Huang, J.L. Duggan, B.E. Gnade, R.M. Wallace, L. Colombo, M. Douglas, and M. Visokay, “Hafnium diffusion studies of hafnium silicate into silicon”, Appl. Phys. Lett. 79, 4192 (2001).

51) P. Seats and B. Gnade, “Is there a future for flat-panel cathode-ray tubes”, Inform. Display 17, 22-27 (2001).

50) B.R. Chalamala, Y. Wei, R.H. Reuss, S. Aggarwal, S. R. Perusse, B.E. Gnade, and R. Ramesh, “Stability and chemical composition of thermally grown iridium-oxide thin films”, J. Vac. Sci. Technol B18, 1919-1922 (2000).

49) C.H. Seager, D.R. Tallant, L. Shea, K.R. Zavadil, B. Gnade, P.H. Holloway, J.S. Bang, X.M. Zhang, A. Vecht, C.S. Gibbons, P. Trwoga, C. Summers, B. Wagner and J. Penczak, “Influence of vacuum environment on the aging of phosphors at low electron energies”, J. Vac. Sci. Technol A17, 3509-3515 (1999).

48) B.R. Chalamala, R.H. Reuss, and B.E. Gnade, “Displaying a Bright Future”, IEEE Circuits and Devices 16, 19-30 (2000).

47) B.R. Chalamala, Y. Wei, R.H. Reuss, S. Aggarwal, B.E. Gnade, R. Ramesh, E.D. Sosa, J.M. Bernhard and D.E. Golden, “Effect of growth conditions on morphology and work function characteristics of iridium oxide thin films,” Appl. Phys. Lett. 74, pp. 1394-1396 (1999).

46) J.M. Bernhard, A.A. Rouse, E.D. Sosa, B.E. Gnade, D.E. Golden and B.R. Chalamala, “A compact electron energy analyzer for measuring field emission field emission electron energy distributions,” Rev. of Sci. Instr., 70, pp. 3299-3302 (1999).

45) B.R. Chalamala, R.M. Wallace and B.E. Gnade, “Interaction of H2O with Spindt-type Mo field emitter arrays,” J. Vac. Sci. and Technol. B17, pp. 303-305 (1999).

44) B.R. Chalamala, R.M. Wallace, and B.E. Gnade, “Poisoning of Spindt-type molybdenum field emitter arrays by CO2”, J. Vac, Sci. Technol. B16, 2866 (1998).

43) B.R. Chalamala, Y. Wei, and B.E. Gnade, “FED up with Fat Tubes”, IEEE Spectrum, April, 42 (1998).

42) Z.Y. Zhao, A.M. Arrale, S.L. Li, D.K. Marble, D.L. Weathers, S. Matteson, J.M. Anthony, B. Gnade, F.D. McDaniel, “Experimental Evidence for a Discrete Transition to Channeling for 1.0 MeV Protons in <100> Si”, Phys. Rev. A.54, 2742 (1998).

41) K.J. Balkus, L.J. Ball, M.E. Gimon-Kinsel, J.M. Anthony, and B.E. Gnade, “A capacitance-type chemical sensor that employs VAPO-5, MnAPO-5 and MAPO-36 molecular sieves as the dielectric phase”, Sensors and Actuators B42, 67 (1997).

40) K.J. Balkus, Jr., L.J. Ball, B.E. Gnade, and J.M. Anthony, “A Capacitance Type Chemical Sensor Based on AlPO4-5 Molecular Sieves”, Chem. of Materials 9, 380 (1997).

39) B.R. Chalamala, R.M. Wallace, and B.E. Gnade, “Surface conditioning of active molybdenum field emission cathode arrays with H2 and helium”, J. Vac, Sci. Technol. B16, 2855 (1998).

38) B.R. Chalamala, R.M. Wallace, and B.E. Gnade, “Effect of O2 on the electron emission characteristics of active molybdenum field emission cathode arrays”, J. Vac, Sci. Technol. B16, 2859 (1998).

37) B.R. Chalamala, R.M. Wallace, and B.E. Gnade, “Effect of CH4 on the electron emission characteristics of active molybdenum field emitter arrays”, J. Vac, Sci. Technol. B16, 3073 (1998).

36) K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, and B.E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphors”, J. Appl. Phys. 79, 7983 (1996).

35) Z.Y Zhao, A.M. Arrale, S.L. Li, F.D. McDaniel, S. Matteson, D.L. Weathers, J.M. Anthony, and B.E. Gnade, “Correlation between energy loss and ion-induced electron emission of 1 MeV protons channeled along the <100> axis of a thin silicon crystal”, Nucl. Instr. and Meth. in Phys. Res. B99, 30-34 (1995).

34) L. Zhang, J.L. Coffer, B.E. Gnade, D. Xu, and R.F. Pinizzotto, “Effects of Local Ambient Atmosphere on the Stability of Electroluminescent Porous Silicon Diodes”, J. Appl. Phys. 77, 5936 (1995).

33) K.J. Balkus, Jr., L.J. Sottile, S.J. Riley, and B.E. Gnade, "The Preparation and Characterization of      AlPO4 Thin Films Via Laser Ablation of AlPO4-H4", Thin Solid Films 260, 4 (1995).

32) J. Yan, S. Shih, K.H. Jung, D.L. Kwong, C.C. Cho and B.E. Gnade, “Study of Thermal Oxidation and Nitrogen Annealing of Luminescent Porous Silicon”, Appl. Phys. Lett. 64, 1374 (1994).

31) J.W. Sleight, M.A. Reed, C.-C. Cho, and B. Gnade, "Vertical Conduction in Thin Si/CaF2/Si     Structures", Superlattices and Microstructures 13, 365 (1993).

30) T. Hanawa, B.E. Gnade, J.L. Ferracane, T. Okabe, and F. Watari, "Composition of Surface Layers formed on Amalgams in Air, Water and Saline", Dental Mat. J. 12, 118 (1993).

29) D.M. Poojary, K.J. Balkus, S.J. Riley, B.E. Gnade, and A. Clearfield, "The Synthesis and Ab Initio Structure Determination of AlPO4-H4 from Powder Diffraction Data", Microporous Materials 2, 245 (1994).

28) K.H. Jung, S. Shih, D.L. Kwong, C.C. Cho, and B.E. Gnade, "Visible photoluminescence from      porous Si formed by annealing and chemically etching amorphous Si", Appl. Phys. Lett. 61, 2467 (1992).

27) A.R. Chourasia, D.R. Chopra, C.-C. Cho, and B.E. Gnade, "Angle Resolved Photoemission Study of CaF2/Si Interfaces", Surface Science 275, 424 (1992).

26) C.-C. Cho, H.Y. Liu, B.E. Gnade, T.S. Kim, and Y. Nishioka, "Epitaxial Relations and Electrical      Properties of Low-Temperature-Grown CaF2 on Si(111)", J. Vac. Sci. Technol. A10, 769 (1992).

25) C.C. Cho, T.S. Kim, B.E. Gnade, H.Y. Liu, and Y. Nishioka, "Electrical properties of low-   temperature-grown CaF2 on Si(111)", Appl. Phys. Lett. 60, 336 (1992).

24) Y. Nishioka, C.C. Cho, S.R. Summerfelt, B.E. Gnade, and G. Brown, "Radiation Characteristics of Epitaxial CaF2 on Silicon", IEEE Trans. Nucl. Sci. 38, 1265 (1991).

23) M.A. Douglas and B.E. Gnade, "Photochemical Removal of Trace Metals from a Silicon Surface", J. Electrochem. Soc. 138 (9), 2799 (1991).

22) G.M. Wells, S. Palmer, F. Cerrina, A. Purdes, and B. Gnade, "Radiation Stability of SiC and Diamond Membranes as Potential X-ray Lithography Mask Carriers", J. Vac. Sci. Technol. B8 (6), 1575 (1990).

21) K.J. Balkus, A.E. Welch, and B.E. Gnade, "The Encapsulation of Rh(III) Phthalocyanines in Zeolites X and Y", J. Inclusion Phenom. Mol. Recog. in Chem. 10, 141 (1991).

20) K.J. Balkus, A.E. Welch, and B.E. Gnade, "The Preparation and Characterization of Rh(III)      SALEN Complexes Encapsulated in Zeolites X and Y", Zeolites 10, 722 (1990).

19) P.B. Smith, B.E. Gnade, and D.K. Marble, "Hydrogen in metalorganic chemical vapor deposited      ZnS thin films determined by nuclear resonance reaction analysis", Thin Solid Films 193/194, 280 (1990).

18) G. Berman, C.C. Shen, and B. Gnade, "XPS Characterization of the Ti/Si and Pt/Si Metallization      Systems as Affected by the Base Deposition Vacuum", T.I. Engineering J. 5, 50 (1988).

17) J.M. Anthony, W.M. Duncan, D.L. Farrington, and B. Gnade, "Trace Impurity Detection in      Materials", T.I. Engineering J. 5, 35 (1988).

16) J.A. Carlisle, D.R. Chopra, T.R. Dillingham, G. Smith, and B. Gnade, "XPS Study of the LPCVD     W/Si Interface: Interfacial Fluorine", J. Appl. Phys. 65 (6), 2313 (1989).

15) T. Hanawa, B.E. Gnade, J.L. Ferracane, T.T. Nguyen, and T. Okabe, "The Nature of Surface Films Formed on Amalgams in Three Environments", J. Dent. Res. 67, 307 (1988).

14) T.R. Dillingham, A.R. Chourasia, D.R. Chopra, S.R. Martin, K.L. Peterson, C.Z. Hu, and B.E.      Gnade, "XPS Study of the Ni/Si Oxide/Si Intrface", J. Vac. Sci. Technol. A5, 3340 (1987).

13) D. Chopra, A. Chourasia, T. Dillingham, K. Peterson, and B. Gnade, "Study of the Ti/Si Interface using X-ray Photoelectron and Auger Electron Appearance Potential Spectroscopies", J. Vac. Sci. Technol. A5, 1984 (1987).

12) B. Gnade, A. Simmons, D. Little, R. Strong, "Determination of the Composition of HgCdTe Oxide Films by Neutron Activation Analysis", Nucl. Inst. Methods. B24/25, 1014 (1987).

11) R.L.Strong, J.M. Anthony, B.E. Gnade, J.A. Keenan, E. Norbeck, L.W. Li, C.R. Helms,      "Composition and Growth Mechanism of Anodic Oxide on Hg(1-x)CdxTe", J. Vac. Sci. and Tech. A4 (4), 1992 (1986).

10) J. Keenan, B. Gnade, and J. White, "Instrumental Neutron Activation Analysis of Processed      Silicon", J. Electrochem. Soc. 132 (9), 2232-2236 (1985).

9) J. Tregilgas and B. Gnade, "Surface Segregation of Impurities Induced by Photon Absorption in      CdTe and (Hg,Cd)Te", J. Vac. Sci. Technol. A3 (1), 156-159 (1985).

8) J.H. Tregilgas, J. Beck, and B. Gnade, "Type Conversion of (Hg,Cd)Te Induced by the      Redistribution of Residual Acceptor Impurities", J. Vac. Sci. Technol. A3 (1), 150-152 (1985).

7) H.F. Schaake, J.H. Tregilgas, J.D. Beck, M.A. Kinch, and B.E. Gnade, "The Effect of Low      Temperature Annealing on Defects, Impurities, and Electrical Properties of (Hg,Cd)Te", J. Vac. Sci. & Technol. A3 (1), 143-149 (1985).

6) J.H. Tregilgas and B.E. Gnade, "Surface Segregation of Ag in CdTe Induced by Photon Absorption", J. Appl. Phys. 55, 588 (1984).

5) R.A. Braga, B.E. Gnade, R.W. Fink, and H.K. Carter, "Half-life of the h9/2 Shell-Model Intruder      State Isomer of 187mAu", Nucl. Phys. A410, 441-444 (1983).

4) B.E. Gnade, R.W. Fink, and J.L. Wood, "Decay of Mass Separated 187Au (8.4 min) to 187Pt", Nucl. Phys. A406, 29-54, (1983).

3) B.E. Gnade, G.P. Schwaiger, C.L. Liotta, and R.W. Fink, "Preparation of Reactor-produced Carrier-free 18F-fluoride as the Potassium 18-Crown-6 Complex for the Synthesis of Labelled Organic Compounds", Int. J. Appl. Rad. Isot. 32, 91-95 (1981).

2) B.E. Gnade, R.A. Braga, and R.W. Fink, "L2,3- subshell x-ray fluorescence and Coster-Kronig      yields at Z = 64 and 67", Phys. Rev. C21, 2025-2032 (1980).

1) B.E. Gnade, R.A. Braga, W.R. Western, J.L. Wood, and R.W. Fink, "Determination of Low-Energy Tailing Corrections in X-ray Coincidence Spectra", Nucl. Instr. Meth. 164, 163 (1979).