58) Govindarajan, S., Böscke, T.S., Kirsch, P.D., Quevedo-Lopez, M.A., Sivasubramani, P., Song, S.C., Wallace, R.W., Gnade, B.E., Hung, P.Y., Price, J., Schröder, U., Ramanathan, S., Lee, B.H., Jammy, R., “Higher permittivity rare earth-doped HfO2 and ZrO2 dielectrics for logic and memory applications”, Proc. Int. Symposium. On VLSI Technology, Systems, and Applications, 4239480 (2007).

57) M.J. Kim, T.H. Lee, J. Kim, R.M. Wallace, B.E. Gnade, “Si-based resonant tunneling devices using UHV wafer bonding”, ECS Transactions 3, 75 (2006).

56) P.D. Kirsch, M.A. Quevedo, G. Pant, S. Krishnan, S.C. Song, H.J. Li, J.J. Peterson, B.H. Lee, R.M. Wallace, M. Kim, B.E. Gnade, “Relationship of HfO2 material properties and transistor performance”, Proc. Int. Symposium. On VLSI Technology, Systems, and Applications, 113-114 (2006).

55) T.S. Boscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroder, S. Kudelka, P.D. Kirsch, C. Crug, P.Y. Hung, J. Price, G. Pant, B.E. Gnade, W. Krautschneider, B.-H. Lee and R. Jammy, “Tetragonal Phase Stabilization by Doping as an Enable of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50 nm Deep Trench DRAM”, 2006 IEEE International Electron Devices Meeting (IEDM) Technical Digest,  (2006).

54) L.K. Sahu, N.A. D’Souza, B.Gnade, “Confinement in layered silicate modified thin films”, Annual Technical Conference – ANTEC, Conf. Proc. Vol. 3, 1501-1505 (2006).

53) L.K. Sahu, N.A. D’Souza, B.Gnade, “Permeability of polymer nanocomposites”, Annual Technical Conference – ANTEC, Conf. Proc. Vol. 3, 1554-1558 (2006).

52) N.A. D’Souza, A. Ranade, B. Gnade, J. Ratto, C. Thellen, “Amorphous PETG nanocomposites with montmorillonite”, Flexible Packaging Conference 2004, 141-145 (2004).

51) P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, cR. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang  G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and  R. Jammy, “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability”, 2006 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 524 (2006).

50) J. Jeon, I. Gory, G. Skidmore, M.J. Kim and B.E. Gnade, “Demonstration of Pick and Place Assembly for Scaled MEMS Devices”, Microsc Microanal 12 (Supp 2), 560 (2006).

49) D.K. Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E. Gnade and M.J. Kim, “Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM”, Microsc Microanal 12 (Supp 2), 1272 (2006).

48) M.A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H.N. Alshareef, J. Barnett, R. Harris, A. Neugroschel, F.S. Aguirre-Tostado, B.E. Gnade, M.J. Kim, R.M. Wallace and B.H.Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling”, submitted to ESSDERC 2006.

47) M.J. Kim, R.M. Wallace and B.E. Gnade, “HRTEM for Nano-Electronic Materials Research”, Characterization and Metrology for ULSI Metrology 2005, pg. 558-564, edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, AIP (Dallas, TX, 2005).

46) M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, B. Hu, and T.P. Ma, “High Performance Gate First HfSiON Dielectric Satisfying 45 nm Node Requirements”, 2005 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 437 (2005).

45) P. Zhao, J. kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” Extended Abstracts of the International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849.

44) P.Zhao, J.Kim, M.J.Kim, B.E.Gnade and R.M.Wallace, “Thermally Stable MoxSiyNz as a Metal gate Electrode for Advanced CMOS Devices,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 152.

43) P. Sivasubramani, P. Zhao, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, G.N. Parsons, and V. Misra, “Thermal Stability studies of Advanced Gate Stack Structures on Si (100)”, in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 156.

42) P. Sivasubramiani, M. A. Quevedo-Lopez , T.H. Lee, M.J. Kim, B.E. Gnade, R. M. Wallace, “Interdiffusion Studies of High-k Gate Dielectric Stack Constituents,” in Defects in Advanced High-κ Dielectric Nano-Electronic Semiconductor Devices, E. Gusev, ed.,  Springer, Netherlands,  pp. 135-146 (2006).

41) C. Nistorica, I. Gory, G. D. Skidmore, F. M. Mantiziba, and B. E.  Gnade, “Friction and Wear Properties of ALD Coated MEMS”, MRS Proc. Vol. 841, R9.16 (2004).

40)  N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, “MRS Symposium – Proceedings Preface”, MRS Proc. 769, p. xiii (2003).

39)   I.S. Jeon, J. Lee, P. Zhao, P. Sivasubramani, T. Oh, H.Y. Kim, D. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim, and R.M. Wallace, “A Novel Method on Tuning Work Functions of Metal Gate Using Stacked Bi-Metal Lyers”, 2004 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 303-306 (2004).

38) A. Ranade, N.A. D’Souza, B. Gnade, and J. Ratto, “Permeability measurement of polymers and layered silicate nanocomposites”, Ann. Tech. Conf – ANTEC 2004 Proc. v. 2, 2405-2409 (2004).

37) A. Ranade, N.A. D’Souza, K. Kayak, B. Gnade, D. Fairbrother, “Correlation between Creep-Receovery, Crystallization and Dispersion of Linear Low Density Polyethylene Nanocomposite Films”, Int. SAMPE Symp. Proc. 48, 2164-2176 (2003).

36)  P. Punchaipetch, G. Pant, R.M. Wallace, B.E.Gnade, “Low Temperature Gate Dielectric for Organic Thin-Film Transistors on Plastic Substrates”, AMLCD Conference, Tokyo (2004).

35)  M.J. Kim, M. in het Panhuis, R. Gupta, A.S. Blum, B.R. Ratna, B.E. Gnade, and R.M. Wallace, “Nano-Patterning and Manipulation of Genetically Engineered Virus Nanoblocks”, Microsc. Microanal. 10 (Suppl 2), 26 (2004).

34) A. Ranade, N. D’Souza, B. Gnade, C. Thellen, C. Orroth, D. Froio, J. Lucciarini, and J. Ratto, “Effect of Coupling agent on the dispersion of PETG montmorillonite nanocomposite films”, MRS Proc. 791 – Mechanical Properties of Nanostructured Materials and Nanocomposites, 283-288 (2003).

33) A. Ranade, N.A. D’Souza, B. Gnade, and A. Dharia, “Nylon 6 and Montmorillonite Layered Silicate (MLS) Nanocomposites”, Ann. Tech. Conf – ANTEC 2003 Proc. v. 2, 1938-1942 (2003).

32) A. Ranade, A. Dharia, N.A. D’Souza, and B. Gnade, “Diffraction and thermal effects in non-intercalating and non-exfoliating amorphous PET montmorillonite packaging”, Ann. Tech. Conf – ANTEC 2003 Proc. v. 2, 1956-1960 (2003).

31)    Manuel Quevedo-Lopez, Bruce E. Gnade and Robert M. Wallace, “Challenges for the Integration of High-κ Gate Dielectrics”, Proc. of the Electrochem. Soc. PV-2002-28, 3 (2003).

30)    M.J. Kim, J. Huang, D.K. Cha, M.A. Quevedo-Lopez, R.M. Wallace and B.E. Gnade, “Thermal Stability of Hf-based High-κ Dielectric Films on Si (100)”,  Microsc. Microanal. 9, 506 (2003).

29)    B.E. Gnade, Gaurang Pant, P. Punchaipetch, R.M. Wallace, “ Low Temperature Deposition of Hafnium Silicate Gate Dielectrics for TFTs on Plastic Substrates”, Proc. Of 2002 IEEE/LEOS,  #02CH37369, 305-306 (2002).

28)    M.J. Kim, A.S. Blum, B. Gnade and B.R. Ratna, “Virus Nanoblocks for Molecular Electronics”, Microsc. Microanal. 8, 1116CD (2002).

27)    B. Gnade, A. Akinwande, R. Shashidhar, and J. Larimer, “Display Bandwidth Reduction via Latched Pixels and Processing at the Pixel”, SPIE Vol. 4712, “Cockpit Displays IX, Displays for Defense Applications”, 313-317 (2002).

26)    M. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, L. Colombo, M. Bevan, M.Douglas,  M.Visokay, and, R. M. Wallace, “Interfacial Diffusion Studies of Hf and Zr into Si from thermally Annealed Hf and Zr Silicates”, MRS Symp. Proc. 686, 223-228 (2002).

25)    P. Seats and B. Gnade, “The Evolution of Flat Panel Cathode Ray Tubes”, Society for Information Display Technical Digest 32, 1004 (2001).

24)    J.M Bernhard, A.A. Rouse, E.D. Sosa, B.E. Gnade, D.E. Golden, B.R. Chalamala, S. Aggarwal, and R. Ramesh, “Field Emission Energy Distribution and Current-Voltage Characteristics Using Single Tip Gated Diodes”, Mat. Res. Soc. Symp. Proc. 550, 85 (2000).

23)    A. Ranade, N.A. D’Souza, and B. Gnade, “Polyamide-imide + montmorillonite nanocomposites”, Annual Technical Conference of the Society of Plastic Engineers, 2171 (2001).

22)    J.M. Bernhard, A. Rouse, E.D. Sosa, D.E. Golden, B.R. Chalamala, S. Aggarwal, B.E. Gnade and R. Ramesh, “Photoelectric work functions of metal oxides and emission characteristics of molybdenum emitter tips with oxide coatings,” 11th International Vacuum Microelectronics Conf., IVMC Digest, p. 32-33, (1998).

21)    J.M. Bernhard, A.A. Rouse, B.E. Gnade, D.E. Golden, B.R. Chalamala, S. Aggarwal, R. Ramesh, “Field emission energy distribution and current-voltage characteristics using single-tip gates diodes,” MRS Proceedings, vol. 558, 85-90(2000).

20)    S. Aggarwal, S.R. Perusse, B.E. Gnade, R. Ramesh, B.R. Chalamala, Y. Wei and R.H. Reuss, "Self assembly of palladium oxide field emitters arrays for flat panel displays," 13th Int. Vacuum Microelectronics Conference, Technical Digest (1999).

19)    B.R. Chalamala, R.M. Wallace, and B.E. Gnade, “Residual Gas Effects on the Emission Characteristics of Active Molybdenum Field Emission Cathode Arrays”, SID 98 Digest, 107 (1998).

18)    B. Gnade, R. Schulze, G. Henderson, D.G. Hopper, “Review of Flat Panel Display Programs and Defense Applications”, Proc. of SPIE in Cockpit Displays IV, Flat Panel Displays in Defense Applications, D.G. Hopper, Editor, vol. 3057, 2 (1997).

17)   K.H. Jung, S. Shih, D.L. Kwong, C.C. Cho and B.E. Gnade “Visible Photoluminescence and Microstructure of Annealed and Chemically Etched Amorphous Si”, MRS Proceedings 283 - Microcrystalline Semiconductors: Materials Sciences and Devices, 33-38 (1993).

16)    Y. Wu, E.G. Jacobs, R.F. Pinizzotto, R. Tsu, H.Y. Liu, S.R. Summerfelt, B.E. Gnade, “Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films”, Ferroelectric Thin Films IV. MRS Symposium 361, 269-274 (1995).

15)    L. Zhang, J.L Coffer, B.E. Gnade, D. Xu, and R.F. Pinizzotto, “The Influence of Local Ambient Atmosphere on the Electroluminesent Stability of Porous Silicon Diodes”, Microcrystalline and Nanocrystalline Semiconductors, MRS Proc. 358, 671-676 (1995).

14)    D.M. Smith, J. Anderson, C.C. Cho, and B.E. Gnade, “Preparation of Low-Density Xerogels at Ambient Pressure For Low K Dielectrics”, in MRS Symposium 371 - Advances in Porous Materials, 261-266 (1995).

13)    R. Tsu, H.Y. Liu, W.Y. Hsu, S. Summerfelt, K. Aoki, B. Gnade, “Correlations of (Ba,Sr)TiO3 Materials and Dielectric Properties”, Ferroelectric Thin Films IV. MRS Symposium 361, 275-280 (1995).

12)    K.J. Balkus, Jr., L.J. Sottile, H. Nguyen, S.J. Riley, and B.E. Gnade, “Molecular sieve-based chemical sensor”, MRS Symp. Proc. 375- Advances in Porous Materials, 33-38 (1994).

11)    B.E. Gnade, S.R. Summerfelt, D. Crenshaw, “Processing and Device Issues of High Permittivity Materials for DRAMs”,  Proc. of NATO Adv. Res. Work. on Science and Tech. of Electroceramic Thin Films, 373-382, ed. by O Auciello and R. Waser (1994).

10)  K.J. Balkus, Jr., S.R. Riley, B.E. Gnade, “Molecularly Designed Ultrafine/Nanostructured Materials”, MRS. Symp. Proc. 351, 437-442 (1994).

9) L.J. Sottile, K.J. Balkus, Jr.,  S.R. Riley, and B.E. Gnade, “Molecular Sieve Based Chemical Sensors”, MRS Symp. Proc. 351, 263-268 (1994).

8)  E.G. Jacobs, Y.G. Rho, R.F. Pinizzotto, S.R. Summerfelt, and B.E. Gnade, "Effect of Ge Barrier on the Microstructure of BaTiO3 Deposited on Silicon by Pulsed Laser Ablation", MRS Symposium Procedings 285 - Symposium I: Laser Ablation in Materials Processing: Fundamentals and Applications, 379-384 (1993).

7) R.F. Pinizzotto, E.G. Jacobs, H. Yang, S.R. Summerfelt, and B.E. Gnade, "Cross-Sectional TEM      Studies of Barium Strontium Titanate Deposited on Silicon by Pulsed Laser Ablation", Ferroelectric Thin Films II Symposium,  MRS Symposium Proceedings, 243, 463 (1992).

6)  A.C. Seabaugh, Y.C. Kao, H.Y. Liu, J.H. Luscombe, H.L Tsai, M.A. Reed, B.E. Gnade, “Characterization of unintentionally-ordered superlattice resonant tunneling diodes”, Sec. Int. Conf. InP and Related Materials, IEEE, New York, 416-423 (1990).

5) F.G. Celii, A.J. Purdes, B.E. Gnade, and D.L. Weathers, "Solid-State Hydrogen Profiles in CVD      Diamond Films", Proceedings of 2nd International Conf. on New Diamond Science and Technology, Washington, D.C. (1990).

4) C.C. Cho, H.Y. Liu, B.E. Gnade, and C.E. Chen, "Substrate Orientation Effects on Strained CaF2/Si Grown by Molecular Beam Epitaxy", Proceedings from 22nd Int. Conference on Solid State Devices and Materials", Sendei, Japan 1167-1168 (1990).

3)  J.A. Keenan, T.Z. Hossain, and B.E. Gnade, "Neutron Activation Analysis at Texas Instruments",      Proceedings of the US 12th TRIGA User's Conference, General Atomic Document TOC-22 (1990).

2) J.L. Duggan, F.D. McDaniel, S. Matteson, D.E. Golden, J.M. Anthony, B.E. Gnade, and J.A.      Keenan, "The University of North Texas Ion Beam Modification and Analysis Laboratory", Nucl. Inst. Meth. B40/41, 709 (1989).

1) R.L. Mlekodaj, R.A. Braga, B.D. Kern, G.A. Leander, K.S. Toth, and B.E. Gnade, "Decay of 138Eu, 136Eu and Deformation in the Light Sm Region", Proceedings of the 190th ACS meeting (Sept. 1985, Chicago, Ill.)